Localization and preparation of recombination-active extended defects for transmission electron microscopy analysis

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Output type: Journal article

Author list: Falkenberg MA, Schuhmann H, Seibt M, Radisch V

Publisher: American Institute of Physics

Publication year: 2010

Journal: Review of Scientific Instruments (0034-6748)

Volume number: 81

Issue number: 6

ISSN: 0034-6748

eISSN: 1089-7623

Languages: English-Great Britain (EN-GB)

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Open access status: closed

Abstract

Recombination-active extended defects in semiconductors frequently occur at a low density which makes their structural and chemical analysis by transmission electron microscopy (TEM) techniques virtually impossible. Here an approach is described that uses in situ electron beam induced current (EBIC) in a focused ion beam machine to localize such defects for TEM lamella preparation. As an example, a defect complex occurring in block-cast multicrystalline silicon with a density of less than 10(4) cm(-3) has been prepared and analyzed by TEM. The chemical sensitivity of the technique is estimated to be about 10(13) atoms cm(-2) which is comparable to synchrotron-based x-ray techniques. The localization accuracy of the TEM lamella is shown to be better than 50 nm when low-energy EBIC is used. (C) 2010 American Institute of Physics. [doi:10.1063/1.3443573]

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