Epitaxial growth of MgO and Fe/MgO/Fe magnetic tunnel junctions on (100)-Si by molecular beam epitaxy

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Output type: Journal article

Author list: Miao GX, Chang JY, van Veenhuizen MJ, Thiel K, Seibt M, Eilers G, Muenzenberg M, Moodera JS

Publisher: American Institute of Physics

Publication year: 2008

Journal: Applied Physics Letters (0003-6951)

Volume number: 93

Issue number: 14

ISSN: 0003-6951

eISSN: 1077-3118

Languages: English-Great Britain (EN-GB)

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Open access status: closed

Abstract

Epitaxial growth of MgO barrier on Si is of technological importance due to the symmetry filtering effect of the MgO barrier in conjunction with bcc-ferromagnets. We study the epitaxial growth of MgO on (100)-Si by molecular beam epitaxy. MgO matches Si with 4:3 cell ratio, which renders Fe to be 45 degrees rotated relative to Si, in sharp contrast to the direct epitaxial growth of Fe on Si. The compressive strains from Si lead to the formation of small angle grain boundaries in MgO below 5 nm, and also affect the transport characteristics of Fe/MgO/Fe magnetic tunnel junctions formed on top. (C) 2008 American Institute of Physics. [DOI: 10.1063/ 1.2999633]

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