Direct imaging of the structural change generated by dielectric breakdown in MgO based magnetic tunnel junctions

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Publication Details

Output type: Journal article

Author list: Thomas A, Drewello V, Schafers M, Weddemann A, Reiss G, Eilers G, Munzenberg M, Thiel K, Seibt M

Publisher: American Institute of Physics

Publication year: 2008

Journal: Applied Physics Letters (0003-6951)

Volume number: 93

Issue number: 15

ISSN: 0003-6951

eISSN: 1077-3118

Languages: English-Great Britain (EN-GB)

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Open access status: green

Full text URL: https://arxiv.org/pdf/0806.2028

Abstract

MgO based magnetic tunnel junctions are prepared to investigate the dielectric breakdown of the barrier. The breakdown is visualized by transmission electron microscopy measurements. The broken tunnel junctions are prepared for the microscopy measurements by focused ion beam out of the junctions characterized by transport investigations. A direct comparison of transport behavior and structure of the intact and broken junctions is obtained. The MgO barrier shows many microscopic pinholes after breakdown. This can be explained within a model assuming a relationship between the current density at the breakdown and the rate of pinhole formation. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3001934]

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