Boron doping compensation of hydrogenated amorphous and polymorphous germanium thin films for infrared detection applications
Authors / Editors
Research Areas
No matching items found.
Publication Details
Output type: Journal article
Author list: Moreno M, Delgadillo N, Torres A, Ambrosio R, Rosales P, Kosarev A, Reyes-Betanzo C, de la Hidalga-Wade J, Zuniga C, Calleja W
Publisher: Elsevier
Publication year: 2013
Journal: Thin Solid Films (0040-6090)
Volume number: 548
Start page: 533
End page: 538
Number of pages: 6
ISSN: 0040-6090
eISSN: 1879-2731
Languages: English-Great Britain (EN-GB)
Unpaywall Data
Open access status: closed
Abstract
Electrical, structural and optical characterization was performed on the films produced. Measurements of the temperature dependence of conductivity, room temperature conductivity (sRT), Ea and current-voltage characteristics under IR radiation were performed in the compensated a-Ge: H and pm-Ge: H films. Our results demonstrate that, effectively, the values of Ea, TCR and IR detection are improved on the a-Ge: H/pm-Ge:H films, using boron doping in low regimes, which results of interest for infrared detectors. (C) 2013 Elsevier B. V. All rights reserved.
Keywords
Amorphous, Germanium, Microbolometers, Polymorphous
Documents
No matching items found.
